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? ? ? ? 1 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx72-bits) adata technology corp. memory module data sheet ddr3-1600(cl11) 240-pin vlp r-dimm 8gb (1024m x 72-bits) version 0.1 document number : R11-0869
? ? ? ? 2 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx72-bits) revision history version changes page date 0.1 initial release - 2012/05/31
? ? ? ? 3 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx72-bits) table of contents 1. general d escripti on .................................................................................... 4 2. featur es ..................................................................................................... 4 3. pin assignm ent ................................................................................... ?.5~6 4. pin descrip tion ....................................................................................... 7~8 5. block diagram ....................................................................................... 9~10 6. absolute maxi mum ratings ...................................................................... 11 7. dc operating condition .......................................................... ?????11 8. input dc & ac logic level fo r single-ended signals???????..?12 ? ? 9. input ac logic level for di fferential signals????????????.12 10. idd specification????????????????????????.13 11.speed bins and cl,trcd,trp,trc and tras for corresponding bin ???????????????????????.13 12. timing parameters ? ???..?????????????????14~15 13. package dimensions????????..??????????????16 14. ordering information????..?????...??.??????????17 ?
? ? ? ? 4 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx72-bits) general description the adata?s module is a 1024mx72 bits 8gb(8192mb) ddr3-1600(cl11)-11-11-28 sdram memory module. the spd is progr ammed to jedec standard latency 1600mbps timing of 11-11-11-28 at 1.5v. the module is composed of eighteen 512mx8 bits cmos ddr3 sdrams in fbga package and one 2kbit eeprom in 8pin tdfn package on a 240pin glass?epoxy printed circuit board. the module is a dual in-line memory modu le and intended for mounting onto 240-pins edge connector sockets. synchronous design allo ws precise cycle control with the use of system clock. data i/o transactions are possi ble on both edges of dqs. range of operating frequencies, programmable la tencies and burst lengths allow the same device to be useful for a variety of high bandwidth, high perform ance memory system applications. features ? power supply (normal): vdd & vddq = 1.5v 0.075v ? mrs cycle with address key programs - cas latency (5,6,7,8,9,10,11) - burst length (bl):8 and 4 with burst chop(bc) ? bi-directional, differentia l data strobe (dqs and /dqs) ? differential clock input (ck, /ck) operation ? dll aligns dq and dqs tr ansition with ck transition ? double-data-rate architecture; two data transfers per clock cycle ? 8 independent internal bank ? internal (self) calibration: internal self calibration through zq pin (rzq:240 ohm1%) ? auto refresh and self refresh ? average refresh period 7.8us at lower then tcase 85c, 3.9us at 85c < tcase 95c ? 8-bit pre-fetch. ? on die termination using odt pin. ? on-board i2c temperature sensor with int egrated serial presence-detect (spd) eeprom. ? eeprom software write protect. ? supports ecc error detection and correction. ? lead-free products are rohs compliant
? ? ? ? 5 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx72-bits) pin assignment pin front pin front pin front pin back pin back pin back 1 vrefdq 41 vss 81 dq32 121 vss 161 nc,dm8 201 dq37 2 vss 42 /dqs8 82 dq33 122 dq4 162 nc,/dqs17 202 vss 3 dq0 43 dqs8 83 vss 123 dq5 163 vss 203 dm4,dqs13 4 dq1 44 vss 84 /dqs4 124 vss 164 nc,cb6 204 nc,/dqs13 5 vss 45 nc,cb2 85 dqs4 125 dm0,dqs9 165 nc,cb7 205 vss 6 /dqs0 46 nc,cb3 86 vss 126 nc,/dqs9 166 vss 206 dq38 7 dqs0 47 vss 87 dq34 127 vss 167 nc 207 dq39 8 vss 48 vtt 88 dq35 128 dq6 168 /reset 208 vss 9 dq2 49 vtt 89 vss 129 dq7 169 cke1,nc 209 dq44 10 dq3 50 cke0 90 dq40 130 vss 170 vdd 210 dq45 11 vss 51 vdd 91 dq41 131 dq12 171 a15 211 vss 12 dq8 52 ba2 92 vss 132 dq13 172 a14 212 dm5,dqs14 13 dq9 53 nc,/err_out 93 /dqs5 133 vss 173 vdd 213 nc,/dqs14 14 vss 54 vdd 94 dqs5 134 dm1,dqs10 174 a12,/bc 214 vss 15 /dqs1 55 a11 95 vss 135 nc,/dqs10 175 a9 215 dq46 16 dqs1 56 a7 96 dq42 136 vss 176 vdd 216 dq47 17 vss 57 vdd 97 dq43 137 dq14 177 a8 217 vss 18 dq10 58 a5 98 vss 138 dq15 178 a6 218 dq52 19 dq11 59 a4 99 dq48 139 vss 179 vdd 219 dq53 20 vss 60 vdd 100 dq49 140 dq20 180 a3 220 vss 21 dq16 61 a2 101 vss 141 dq21 181 a1 221 dm6,dqs15 22 dq17 62 vdd 102 /dqs6 142 vss 182 vdd 222 nc,/dqs15 23 vss 63 ck1,nc 103 dqs6 143 dm2,dqs11 183 vdd 223 vss 24 /dqs2 64 /ck1,nc 104 vss 144 nc,/dqs11 184 ck0 224 dq54 25 dqs2 65 vdd 105 dq50 145 vss 185 /ck0 225 dq55 26 vss 66 vdd 106 dq51 146 dq22 186 vdd 226 vss 27 dq18 67 vrefca 107 vss 147 dq23 187 nc,/event 227 dq60 28 dq19 68 nc,par_in 108 dq56 148 vss 188 a0 228 dq61 29 vss 69 vdd 109 dq57 149 dq28 189 vdd 229 vss 30 dq24 70 a10/ap 110 vss 150 dq29 190 ba1 230 dm7,/dqs16 31 dq25 71 ba0 111 /dqs7 151 vss 191 vdd 231 nc,dqs16 32 vss 72 vdd 112 dqs7 152 dm3,dqs12 192 /ras 232 vss 33 /dqs3 73 /we 113 vss 153 nc,/dqs12 193 /s0 233 dq62
? ? ? ? 6 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx72-bits) 34 dqs3 74 /cas 114 dq58 154 vss 194 vdd 234 dq63 35 vss 75 vdd 115 dq59 155 dq30 195 odt0 235 vss 36 dq26 76 /s1,nc 116 vss 156 dq31 196 a13 236 vddspd 37 dq27 77 odt1,nc 117 sa0 157 vss 197 vdd 237 sa1 38 vss 78 vdd 118 scl 158 nc,cb4 198 nc,/s3 238 sda 39 nc,cb0 79 nc,/s2 119 sa2 159 nc,cb5 199 vss 239 vss 40 nc,cb1 80 vss 120 vtt 160 vss 200 dq36 240 vtt
? ? ? ? 7 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx72-bits) pin description pin name function ck0, /ck0 system clock active on the positive and negative edge to sample all inputs. cke0~cke1 clock enable masks system clock to freeze operation from the next clock cycle. cke should be enabled at least on cycle prior new command. disable input buffers for power down in standby /s0~/s3 chip select disables or enables device oper ation by masking or enabling all input except ck, cke and l(u)dqm a0~a15 address row / column address are multiplexed on the same pins. (row address: a0~a15 , column address: a0~a9 , auto precharge: a10/ap) ba0~ba2 banks select selects bank to be activated during row address latch time. selects bank for read / write during column address latch time. dq0~dq63 cb0~cb7 data data and check bit inputs / outputs are multiplexed on the same pins. dqs0~dqs8, /dqs0~/dqs8 data strobe bi-directional data strobe tdqs9~tdqs17, /tdqs9~/tdqs17 termination data strobe termination data strobe /ras row address strobe latches row addresses on the positive edge of the ck with /ras low /cas column address strobe latches column addresse s on the positive edge of the ck with /cas low /we write enable enables writ e operation and row recharge. vdd / vss power supply/ground power and ground for the input buffers and the core logic. vrefdq power supply reference power supply for reference.dq,dm.vdd/2 vrefca power supply reference power supply for reference. command , address, & control.vdd/2 vddq power supply power supply for the ddr3 sdram out put buffers to provide improved noise immunity sda serial data i/o eeprom serial data i/o
? ? ? ? 8 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx72-bits) scl serial clock eeprom clock input sa0~sa2 address in eeprom eeprom address input odt0~odt1 on die termination when high, termination resist ance is enabled for all dq, /dq and dm pins, assuming the function is enabled in the extended mode register set. p ar _ i n parity input parity bit for the command and address bus. ("1 " : odd, "0 ": even) /reset reset /reset is an active low cmos input referenc ed to vss. the reset# input receiver is a cmos input defined as a rail-to-rail signal with dc high 0.8 vdd and dc low 0.2 vdd. reset# assertion and deassertion are asynchronous. / e rr _ o ut parity error output: parity error found on the command and address bus. /event thermal event this signal indicates that a thermal event has been detected in the thermal sensing device.the system should guarantee the electrical level requirement is met for the event pin on ts/spd part. nc no connection this pin is recommended to be left no connection on the device.
? ? ? 9 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx 72-bits) ? block diagram
? ? ? 10 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx 72-bits) ? absolute maximum ratings parameter symbol value unit voltage on vdd supply relative to vss vdd -0.4 ~ 1.975 v voltage on vddq pin relative to vss vddq -0.4 ~1.975 v voltage on any pin relative to vss vin, vout -0.4 ~ 1.975 v storage temperature tstg -55 ~ +100 note: ddr3 sdram component specification. operation temperature condition parameter symbol value unit note normal operating temperature range tc 0~+85 1 extended temperature range (optional) tc +85~+95 1 note: (1) if the dram case temperature is above 85 , the auto-refresh command interval has to be reduced to trefi=3.9us. dc operating condition voltage referenced to vss = 0v, vdd&vddq=1. 5v, tc = 0 to 85 parameter symbol min max unit note supply voltage vdd 1.425 1.575 v 1,2 vddspd 3 3.6 v supply voltage for output vddq 1.425 1.575 v 1,2 i/o reference voltage(cmd/add) vrefca, (dc) 0.49 x vdd 0.51 x vdd v 3,4 i/o reference voltage(dq) vrefdq, (dc) 0.49 x vdd 0.51 x vdd v 3,4 termination voltage vtt vdd/2 - tbd vdd/2 +tbd v note: (1) under all conditions vddq must be less than or equal to vdd. (2) vddq tracks with vdd. ac parameters are measured with vdd and vddq tied together. (3) the ac peak noise on vref may not allow vref to deviate from vref(dc) by more than 1% vdd (for reference: approx. 15mv) (4) for reference: approx. vdd/2 15mv
? ? ? 11 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx 72-bits) ? input dc & ac logic level for single-ended signals parameter symbol min max unit note dc input logic high voltage vih (dc) vref+100 vdd mv 1 dc input logic low voltage vil (dc) vss vref-100 mv 1 ac input logic high vih(ac) vref + 175 - mv 1,2 ac input logic low vil(ac) - vref ? 175 mv 1,2 note: 1. for dq and dm, vref = vrefdq . for input only pins except reset, or vref = vrefca. 2. see "overshoot and undershoot s pecifications" on component datasheet ? input ac logic level for differential signals parameter symbol min max unit note differential input high vihdiff +0.2 note 3 v 1 differential input low vildiff note 3 -0.2 v 1 differential input high ac vihdiff(ac) 2 (vih(ac)-vref) note 3 v 2 differential input low ac vildiff (ac) note 3 2 x (vil(ac) - vref ) v 2 notes: 1. used to define a differential signal slew-rate. 2. for ck - ck use vih/vil(ac) of add/cmd and vrefca; for dq s - dqs, dqsl - dqsl, dqsu - dqsu use vih/vil(ac) of dqs and vrefdq; if a reduced ac-high or ac-low level is used for a signal group, then the reduced level applies also here. 3. these values are not defined, however they single-ended signals ck, /ck, dqs, /dqs, dqsl, /dqsl, dqsu, /dqsu need to be within the respective limits (vih(dc) max, vil(dc)min) for si ngle-ended signals as well as the limitations for overshoot and un dershoot on component datasheet.
? ? ? 12 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx 72-bits) ? idd specification symbol condition typical unit idd0 operating one bank ac tive-precharge current 855 ma idd1 operating one bank active-read-precharge current 963 ma idd2p0 precharge power-down current slow exit 360 ma idd2p1 precharge power-down current fast exit 666 ma idd2q precharge quiet standby current 846 ma idd2n precharge sta ndby current 900 ma idd3p active power-down current 1134 ma idd3n active standby current 1116 ma idd4w operating burst write current 1665 ma idd4r operating burst read current 2800 ma idd5b burst refresh current 2160 ma idd6 self refresh current: normal temperature range 396 ma idd7 operating bank interleave read current 2790 ma idd8 reset low current 396 ma note: idd current measure method and detail patterns are described on ddr3 component datasheet. only for reference. speed bins and cl,trcd,trp,trc and tras for corresponding bin speed ddr3-1600 units bin(cl-trcd-trp) 11-11-11 parameter min cl 11 tck trcd 13.125 ns trc 48.125 ns trrd 6 ns tck 1.25 ns tras 35 ns trp 13.125 ns trfc 300 ns
? ? ? 13 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx 72-bits) ? timing parameters: symbol ac characteristics parameter min max unit tck(dll_off) minimum clock cycl e time (dll off mode) 8 - ns tch(avg) average high pulse width 0.47 0.53 tck(avg) tcl(avg) average low pulse width 0.47 0.53 tck(avg) tdqsq dqs, dqs# to dq skew, per group, per access - 100 ps tqh dq output hold time from dqs, dqs# 0.38 - tck(avg) tds(base) data setup time to dqs, dqs# referenced to vih(ac) / vil(ac) levels 10 - ps tdh(base) data hold time from dqs, dqs# referenced to vih(dc) / vil(dc) levels 45 - ps tdipw dq and dm input pulse width for each input 360 - ps trpre dqs,dqs# differential r ead preamble 0.9 - tck(avg) trpst dqs, dqs# differential read postamble 0.3 - tck(avg) tqsh dqs, dqs# differential output high time 0.40 - tck(avg) tqsl dqs, dqs# differential output low time 0.40 - tck(avg) twpre dqs, dqs# differential write preamble 0.9 - tck(avg) twpst dqs, dqs# differential write postamble 0.3 - tck(avg) tdqsck dqs, dqs# rising edge output access time from rising ck, ck# -225 225 ps tlz dq, dqs and dqs# low-impedance time -450 225 ps thz dq, dqs and dqs# high-impedance time - 225 ps tdqsl dqs, dqs# differential input low pulse width 0.45 0.55 tck(avg) tdqsh dqs, dqs# differential input high pulse width 0.45 0.55 tck(avg) tdqss dqs, dqs# rising edge to ck, ck# rising edge -0.27 0.27 tck(avg) tdss dqs, dqs# falling edge setup time to ck, ck# rising edge 0.18 - tck(avg) tdsh dqs, dqs# falling edge hold time from ck, ck# rising edge 0.18 - tck(avg) trtp internal read command to precharge command delay max(4nck,7.5ns) - - twtr delay from start of internal write transaction to internal read command max(4nck,7.5ns) - - twr write recovery time 15 - ns tmrd mode register set command cycle time 4 - nck
? ? ? 14 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx 72-bits) ? ? tis(base) ac175 command and address setup time to ck, ck# referenced to vih(ac) / vil(ac) levels 45 - ps tih(base) dc100 command and address hold time from ck, ck# referenced to vih(dc) / vil(dc) levels 120 - ps txp exit power down with dll on to any valid command; exit precharge power down with dll frozen to commands not requiring a locked dll max(3nck,6ns) - - tcke cke minimum pulse width max(3nck,5ns) - - trefi average periodic refresh interval 85 ? ? ? 15 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx 72-bits) ? package dimensions ? ? ?
? ? ? 16 ad3v1600w8g11 ddr3-1600(cl11) 240-pin vlp r-dimm 8gb(1024mx 72-bits) ? ordering information ?

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